Nanoparticles as the active element of high-temperature metal-insulator-silicon carbide gas sensors

Advanced Materials

Volumn 13, Issue 8, 2001, Pages 597-601

  Böhme, Oliver ^a   Spetz, Lloyd Anita ^b   Lundström, Ingemar ^b   Schmeißer, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; GAS SENSING ELECTRODES; HIGH TEMPERATURE APPLICATIONS; INTERFACES (MATERIALS); MIM DEVICES; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON WAFERS; X RAY SPECTROSCOPY;

ACTIVE ELEMENT; CAPACITOR CONFIGURATION; HIGH TEMPERATURE METAL INSULATOR SILICON CARBIDE GAS SENSORS; SCHOTTKY DIODE CONFIGURATION; X RAY PHOTOEMISSION SPECTRUM;

NANOSTRUCTURED MATERIALS;

EID: 0343897994     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4095(200104)13:8<597::AID-ADMA597>3.0.CO;2-C     Document Type: Article

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