Scanning capacitancemicroscope study of a SiO2/Si interface modified by charge injection

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Tomiye, H ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ATOMIC FORCE; C-V CURVE; CAPACITANCE VOLTAGE; CHARGE STORAGE; COMBINED MICROSCOPE; ELECTRICAL PROPERTY; INTERFACE CHARGE; LOCAL VARIATIONS; SCANNING CAPACITANCE; SCANNING TUNNELING MICROSCOPES; SI SUBSTRATES; TRAPPED CHARGE;

CAPACITANCE; MICROSCOPES; SCANNING; SILICON; SILICON COMPOUNDS;

CRYSTAL ATOMIC STRUCTURE;

EID: 0343305150     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051177     Document Type: Article

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