Characterization of SiO 2 /Si with a novel scanning capacitance microscope combined with an atomic force microscope

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 166-170

  Tomiye, Hideto ^a   Kawami, Hiroshi ^b   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

Atomic force microscope; Scanning capacitance microscope; Scanning tunneling microscope; SiO 2 Si; Trapped charge

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON; CRYSTAL IMPURITIES; ELECTRIC CHARGE; ION IMPLANTATION; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON WAFERS; THERMOOXIDATION;

CAPACITANCE VOLTAGE CHARACTERISTICS; SCANNING CAPACITANCE MICROSCOPE;

INTERFACES (MATERIALS);

EID: 0031548387     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80072-4     Document Type: Article

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