Highly reflective AlN/GaN and ZiO2/SiO2 multilayer reflectors and their applications for InGaN/GaN surface emitting laser structures

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1998, Pages 34-35

  Sakaguchi, T ^a   Shirasawa, T ^a   Mochida, N ^a   Inoue, A ^a   Iwata, M ^a   Honda, T ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; EVAPORATION; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; MULTILAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTORS (DBR); ELECTRON BEAM EVAPORATION; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

LASER ACCESSORIES;

EID: 0032297066     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)