Fabrication and performance of p-i-n CdTe radiation detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 436, Issue 1-2, 1999, Pages 132-137

  Niraula, Madan ^a   Mochizuki, Daisuke ^a   Aoki, Toru ^a   Tomita, Yasuhiro ^b   Nihashi, Tokuaki ^b   Hatanaka, Yoshinori ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; IODINE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIOISOTOPES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

HOMOEPITAXY; SPECTRAL RESPONSE; X RAY PHOTONS;

RADIATION DETECTORS;

EID: 0342733677     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00609-9     Document Type: Article

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