Asymmetry of the RTSs capture and emission kinetics in nMOSFETS processed in a 0.35 μm CMOS technology

Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

Volumn , Issue , 1997, Pages 232-235

  Lukyanchikova, N B ^a   Petrichuk, M V ^a   Garbar, N P ^a   Simoen, E ^a   Claeys, C ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

GATE DRAIN-DIODE REGIME; RANDOM TELEGRAPH SIGNALS (RTS);

MOSFET DEVICES;

EID: 0031295465     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)