Spatial distributions of individual traps in a Si/SiO2 interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1380-1382

  Sakamoto, Toshitsugu ^a   Kawaura, Hisao ^a   Baba, Toshio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Random telegraph signal; Si SiO2 interface; Single electron tunneling; Trap

Indexed keywords

EID: 0006367108     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1380     Document Type: Article

References (11)

1. M. J. Kirton and M. J. Uren: Adv. Phys. 38 (1989) 367.
2. K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth and D. M. Tennant: Phys. Rev. Lett. 52 (1984) 228.
3. M. J. Kirton and M. J. Uren: Appl. Phys. Lett. 48 (1986) 1270.
4. M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karmann and K. Scheffer: Semicond. Sci. Technol. 4 (1989) 1116.
5. D. V. Lang: J. Appl. Phys. 45 (1974) 3023.
6. J. H. F. Scott Thomas, S. B. Field, M. A. Kastner, H. I. Smith and D. A. Antoniadis: Phys. Rev. Lett. 62 (1989) 583.
7. C. de Graaf, J. Caro, S. Radelaar, V. Lauer and K. Heyers: Phys. Rev. B 44 (1991) 9072.
8. T. Sakamoto and K. Nakamura: Appl. Phys. Lett. 68 (1996) 2861.
9. T. Sakamoto, Y. Nakamura, S. W. Hwang and K. Nakamura: Jpn. J. Appl. Phys. 34 (1995) 4302.
10. A. Ohata, A. Toriumi, M. Iwase and K. Natori: J. Appl. Phys. 68 (1990) 200.
11. G. Timp, R. E. Behringer and J. E. Cunningham: Phys. Rev. B 42 (1990) 9259.