Monte Carlo simulation of microwave devices

Mathematical and Computer Modelling

Volumn 23, Issue 8-9, 1996, Pages 167-179

  Ravaioli, U ^a   Lee, C H ^a   Patil, M B ^a,b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Hot electron transport; III V compounds; Microwave devices; Monte Carlo simulation; Transient simulation

Indexed keywords

EID: 0042475883     PISSN: 08957177     EISSN: None     Source Type: Journal    
DOI: 10.1016/0895-7177(96)00048-9     Document Type: Article

References (15)

1. K. Hess, Advanced Theory of Semiconductor Devices, Prentice Hall, Englewood Cliffs, NJ, (1988).
2. R.W. Hockney and J.W. Eastwood, Computer Simulation Using Particles, McGraw-Hill, New York, (1981).
3. W. Fawcett, A.D. Boardman and S. Swain, Monte Carlo determination of electron transport properties in Gallium Arsenide, J. Phys. Chem. Solids 31, 1963 (1970).
4. R.M. Yorston, Free-flight time generation in the Monte Carlo simulation of carrier transport in semiconductors, J. Comp. Phys. B64, 177 (1986).
5. V. Borsari and C. Jacoboni, Monte Carlo calculation on electron transport in CdTe, Phys. Status Solidi B54, 649 (1972).
6. M. Cheng and E.E. Kunhardt, Electron energy distributions, transport parameters, and rate coefficients in GaAs, J. Appl. Phys. B63, 2322 (1988).
7. K. Hess, Editor, Monte Carlo Device Simulation: Pull Band and Beyond, Kluwer Academic Publishers, (1991).
8. K.M. Connolly, R.O. Grondin, R.P. Joshi and S.M. El-Ghazaly, Physical modeling of ultrafast electrical waveform generation and characterization, In Proc. of SPIE Symposium on Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, Volume 1282, p. 172, (1990).
9. S. Pennathur, U.A. Ranawake, V.K. Tripathi, P. Lenders and S.M. Goodnick, PMC-3D: A parallelized 3D Monte Carlo simulator for electronic and electro-optic devices, In Proc. of Int. Workshop on Computational Electronics, August 11-13, 1993, Leeds, U.K., p. 156.
10. P.A. Blakey and R.K. Froelich, On the transient analysis of circuits containing multiple diodes, IEEE Trans. Microwave Theory Tech. MTT-31, 781 (1983).
11. C.H. Lee and U. Ravaioli, Monte Carlo comparison of heterojunction cathode Gunn oscillators, Electronics Letters 26, 425 (1990).
12. M.B. Patil and U. Ravaioli, Transient simulation of semiconductor devices using the Monte Carlo method, Solid-State Electronics 34, 1029 (1991).
13. M.R. Hueschen, N. Moll and A. Fischer-Colbrie, Improved microwave performance in transistors based on real-space transfer, Appl. Phys. Lett. 57, 386 (1990).
14. M.B. Patil, U. Ravaioli and M.R. Hueschen, Monte Carlo simulation of real-space transfer transistors: Device physics and scaling effects, IEEE Trans. on Electron Devices ED-40, 480 (1993).
15. A. Kastalsky and S. Luryi, Novel real-space hot-electron transfer devices, IEEE Electron Device Lett. EDL-4, 334 (1983).