SCOPUS 정보 검색 플랫폼

Volumn 50, Issue 1-4, 2000, Pages 481-486

Three-dimensional simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from CuI(tmvs)(hfac)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; COPPER; INTERCONNECTION NETWORKS; PROBABILITY DISTRIBUTIONS; SUBSTRATES;

CONTACT HOLE FILLING; DUAL-DAMASCENE INTERCONNECTS; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION;

INTEGRATED CIRCUIT LAYOUT;

EID: 0342526701 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(99)00318-4 Document Type: Article

Times cited : (5)

References (6)

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- (1996) IEEE Trans. Semicond. Manufact. , vol.9 , pp. 67-73
- Bär, E.¹ Lorenz, J.²

2
- 85031534412
- Ph.D. thesis, University of Erlangen-Nuremberg, Germany
- E. Bär, Three-dimensional simulation of layer deposition processes in semiconductor technology, Ph.D. thesis, University of Erlangen-Nuremberg, Germany, 1998.
- (1998) Three-dimensional Simulation of Layer Deposition Processes in Semiconductor Technology
- Bär, E.¹

3
- 5544255487
- I hexafluoroacetylacetonate trimethylvinylsilane for ultralarge scale integration applications
- I hexafluoroacetylacetonate trimethylvinylsilane for ultralarge scale integration applications. J. Vac. Sci. Technol. B. 14:1996;1828-1836.
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 1828-1836
- Braeckelmann, G.¹ Manger, D.² Burke, A.³ Peterson, G.G.⁴ Kaloyeros, A.E.⁵ Reidsema, C.⁶ Omstead, T.R.⁷ Loan, J.F.⁸ Sullivan, J.J.⁹

4
- 0001628983
- Profile simulation of conformality of chemical vapor deposited copper in subquarter-micron trench and via structures
- Burke A., Braeckelmann G., Manger D., Eisenbraun E., Kaloyeros A.E., McVittie J.P., Han J., Bang D., Loan J.F., Sullivan J.J. Profile simulation of conformality of chemical vapor deposited copper in subquarter-micron trench and via structures. J. Appl. Phys. 82:1997;4651-4660.
- (1997) J. Appl. Phys. , vol.82 , pp. 4651-4660
- Burke, A.¹ Braeckelmann, G.² Manger, D.³ Eisenbraun, E.⁴ Kaloyeros, A.E.⁵ McVittie, J.P.⁶ Han, J.⁷ Bang, D.⁸ Loan, J.F.⁹ Sullivan, J.J.¹⁰

5
- 30844441658
- Making the move to dual damascene processing
- Singer P. Making the move to dual damascene processing. Semicond. Int. August:1997;79-82.
- (1997) Semicond. Int. , pp. 79-82
- Singer, P.¹

6
- 0039084183
- Simulation of the step coverage for chemical vapor deposited silicon dioxide
- Wille H., Burte E., Ryssel H. Simulation of the step coverage for chemical vapor deposited silicon dioxide. J. Appl. Phys. 71:1992;3532-3537.
- (1992) J. Appl. Phys. , vol.71 , pp. 3532-3537
- Wille, H.¹ Burte, E.² Ryssel, H.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.