High-Performance Uncooled 1.3-µm AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications

IEEE Journal of Quantum Electronics

Volumn 30, Issue 2, 1994, Pages 511-523

  Wang, Zheng ^b   Darby, David ^b   Flanders, Dale ^b   Hsieh, J James ^b   Lin, Wei ^a   Wang, M C ^a   Andreadakis, Nicholas C ^a   Hwang, D M ^a   Koza, M A ^a   Lee, Tien Pei ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

^b Lasertron   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

MEAN TIME TO FAILURE; STRAINED LAYERS; SUBSCRIBER LOOPS;

SEMICONDUCTOR LASERS;

EID: 0028379805     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.283799     Document Type: Article

References (45)

1. G. P. Agrawal and N. K. Dutta, Long-Wavelength Semiconductor Lasers. New York: Van Nostrand Reinhold, 1986.
2. A. R. Adams, “Band-structure engineering for low-threshold high-efficiency efficiency semiconductor lasers,” Electron. Lett., vol. 22, no. 5, pp. 249–250, 1986.
3. E. Yablonovitch and E. O. Kane, “Band structure engineering of semi-conductor lasers for optical communications,” J. Lightwave Technol., vol. 6, no. 8, pp. 1292–1299, 1988.
4. C. E. Zah, R. Bhat, F. J. Favire, Jr., S. G. Menocal, N. C. Andreadakis, K. W. Cheung, D. M. Hwang, M. A. Koza, and T. P. Lee, “Low-threshold threshold 1.5 µm compressive-strained multiple-and single-quantum-well well lasers,” IEEE J. Quantum Electron., vol. 27, pp. 1440–1450, June 1991.
5. C. E. Zah, R. Bhat, B. Pathak, C. Caneau, F. J. Favire, N. C. Andreadakis, D. M. Hwang, M. A. Koza, C. Y. Chen, and T. P. Lee, “Low threshold 1.5 µm tensile-strained single quantum well lasers,” Electron. Lett., vol. 27, pp. 1414–1415, 1991.
6. P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, and T. van Dongen, “High performance 1.5 µm wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers,” IEEE J Quantum Electron., vol. 27, pp. 1426–1439. June 1991.
7. P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, and T. van Dongen, “Submilliamp threshold current (0.62 mA at 0 °C) and high output power (220 mW). 1.5 µm tensile strained InGaM single quantum well lasers,” Electron. Lett., vol. 28, no. 9, pp. 829–830, 1992.
8. P. J. A. Thijs, T. va n Dongen, L. F. Tiemeijer, R. W. M. Slootweg, and J. J. M. Binsma, “High output power (380 mW) low threshold current (1.3 mA), l ow linewidth enhancement factor (< 2) λ = 1.3 µm strained quantum well lasers,” in Proc. 17th European Conf. Opt. Commun. vol. 2, Paris, France, Sept. 1991, 48-51.
9. T. Namegay, A. Kasukawa, N. Iwai, and T. Kikuta, “High temperature operation of 1.3 µm GaInAsP/InP GRINSCH strained-layer quantum well lasers,” Electron. Lett., vol. 29, no. 4, pp. 392–393, 1993.
10. H. Temkin, D. Coblentz, R. A. Logan, J. P. van der Ziel, T. Tanbun-Ek, R. D. Yadvish, and A. M. Sergent, “High temperature characteristics of InGaAsP/InP laser structures,” Appl. Phys. Lett., vol. 62, pp. 2402–2404, May 1993.
11. Y. Sugiyama, T. Inata, T. Fujii, Y. Nakata, S. Muto, and S. Hiyamizu, “Conduction band edge discontinuity of In 0.52 Ga 0.48 As/In 0.52 (Ga1-x Alx) 0.48 (0 < x < 1) heterostructures,” Japan. J. Appl. Phys., vol. 25, no. 8, pp. L648--L650, 1986.
12. C. G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Phys. Rev. B, vol. 39, no. 3, pp. 1871–181, 1989.
13. W. T. Tsang and N. A. Olsson, “New current injection 1.5-µm wave-length Ga x Al y In 1-x-y As/Inp double-heterostructure laser grown by molecular beam epitaxy,” Appl. Phys. Lett., vol. 42, no. 11, pp. 922–924, 1983.
14. H. Asahi, Y. Kawamura, and K. Wakita, “MBE-grown InGaAs/InAlAs MQW structures and InGaAs/InGaAlAs/InP SCH-MQW laser diodes,” in Proc. 9th Int. Semiconductor Laser Conf., Rio de Janeiro, Brazil, Aug. 1984 pp. 82–83.
15. C. E. Zah, R. Bhat, F. J. Favire, M. A. Koza, T. P. Lee, D. Darby, D. C. Flanders, and J. J. Hsieh, “Low threshold 1.3 µm strained-layer Al x Ga y In 1-x-y As quantum well laser,” Electron. Lett., vol. 28, no. 25, pp. 2323–2324, 1992.
16. A. Kasukawa, R. Bhat, C. E. Zah, S. A. Schwarz, D. M. Hwang, M. A. Koza, and T. P. Lee, “Low threshold current density 1.5 µm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by metal organic chemical vapor deposition" Electron. Lett., vol. 27, no. 12, pp. 1063–1065, 1991.
17. A. Kasukawa, R. Bhat, C. E. Zah, M. A. Koza, and T. P. Lee, “Very low threshold current density 1.5 µm GaInAs/AlGalnAs graded-index separate-confinement-heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition,” Appl. Phys. Lett., vol. 59, pp. 2486–2488, 1991.
18. R. W. Glew, B. Garrett, and P. D. Greene, “Very low threshold current density SCH-MQW laser diodes emitting at 1.55 µm,” Electron. Lett., vol. 25, pp. 1103–1104, Aug. 1989.
19. B. Stegmüller, B. Borchert, and R. Gessner, “1.57 µm strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 °C) and ultrahigh-speed (17 GHz) performance,” IEEE Photon. Technol. Lett., vol. 5, no. 6, pp. 597–599, 1993.
20. W.-Y. Choi, T. P. E. Broekaert, and C. G. Fonstad, “MBE-grown InGaAlAs 1.5 µm MQW ridge waveguide laser diodes with AlAs etch stop layers,” Electron. Lett., vol. 29, no. 5, pp. 483–485, 1993.
21. M. J. Mondry, Z. M. Chuang, M. G. Peters, and L. A. Coldren, “Low threshold current density 1.5 µm (In, Ga, Al)As quantum well lasers grown by MBE,” Electron. Lett., vol. 28, no. 15, pp. 1471–1472, 1992.
22. M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs. Norwood, MA: Artech House, 1991.
23. P. W. McIlroy, A. Kurobe, and Y. Uematsu, “Analysis and application of theoretical gain curves to design of multi-quantum-well lasers,” IEEE J. Quantum Electron., vol. QE-21, pp. 1958–1963, 1985.
24. A. P. Mozer, S. Hausser, and M. H. Pilkuhn, “Quantitative evaluation of gain and losses in quaternary lasers,” IEEE J. Quantum Electron., vol. QE-21, no. 6, pp. 719–725, 1985.
25. U. Koren, B. I. Miller, Y. K. Su, T. L. Loch, and J. E. Bowers, “Low in-ternal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser,” Appl. Phys. Lett., vol. 51, no. 21, pp. 1744–1746, 1987.
26. I. Joindot and J. L. Beylat, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 µm semiconductor lasers,” Electron. Lett., vol. 29, no. 7, pp. 604–606, 1993.
27. J. E. Bowers, “High speed semiconductor laser design and performance,” Solid-State Electron., vol. 30, no. 1, pp. 1–11, 1987.
28. K. Uomi, S. Sasaki, T. Tsuchiya, H. Nakano, and N. Chinone, “Ultralow chirp and high-speed 1.55 µm multiquantum well AR-shifted DFB lasers,” IEEE Photon. Technol. Lett., vol. 2, no. 4, pp. 229–230, 1990.
29. M. P. C. M. Krijn, G. W. ‘t Hooft, M. J. B. Boermans, P. J. A. Thijs, T. van Dongen, J. J. M. Binsma, L. F. Tiemeijer, and C. J. van der Poel, “Improved performance of compressively as well as tensile strained quantum-well lasers,” Appl. Phys. Lett., vol. 61, no. 15, pp. 1772–1774, 1992.
30. E. P. O’Reilly, G. Jones, A. Ghiti, and A. R. Adams, “Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers,” Electron. Lett., vol. 27, no. 16, p p. 1417–1419, 1991.
31. A. R. Adams, M. Asada, Y. Suematsu, and S. Arai, “The tem-perature dependence of the efficiency and threshold current of In 1-x Ga x As y P 1- y lasers related to intervalence band absorption,” Japan. J. Appl. Phys., vol. 19, no. 10, pp. L621--L624, 1980.
32. G. Fuchs, J. Hörer, A. Hangleiter, V. Härle, F. Scholz, R, W. Glew, and L. Goldstein, “Intervalence band absorption in strained and unstained InGaAs multiple quantum well structures,” Appl. Phys. Lett., vol. 60, no. 2, pp. 231–233, 1992.
33. A. Yariv, “Scaling laws and minimum threshold currents for quantum-confined confined semiconductor lasers,” Appl. Phys. Lett., vol. 53, pp. 1033–1035, 1988.
34. Y. Arakawa and H. Sakaki, “Multidimentional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett., vol. 40, pp. 939–941, 1982.
35. R. Bhat, M. A. Koza, K. Kash, S. J. Allen, W. P. Hong, S. A. Schwarz, G. K. Chang, and P. Lin, “Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications,” J. Crystal Growth, vol. 108, pp. 441–448, 1991.
36. G. Allen Vawter and D. R. Myers, “Useful design relationships for the engineering of thermodynamically stable strained-layer structures,” J. Appl. Phys., vol. 65, no. 12, pp. 4769–4773, 1989.
37. R. Bhat, C. E. Zah, M. A. Koza, D. M. Hwang, F. J. Favire, and B. Pathak, “OMCVD growth of strained Al x Ga y In 1-x-y As for low threshold 1.3 µm and 1.55 µm quantum well lasers,” in Proc. 4th Int. Conf. InP and Related Mater. Newport, RI, Apr. 1992, paper THD2, p. 453.
38. R. Bhat, C. E. Zah, C. Caneau, M. A. Koza, D. M. Hwang, F. J. Favire, B. Pathak, P. S. D. Lin, A. S. Gozdz, and A. Kasukawa, “Low threshold 1.3 and 1.55 µm strained quantum well lasers,” in Ext. Abst. Int. Conf. Solid State Devices Mater., Tsukuba., Japan, 1992; p. 604.
39. A. J. Moseley, J. Thompson, D. J. Robbins, and M. Q. Kearley, “High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators,” Electron. Lett., vol. 25, no. 25, pp. 1717–1818, 1989.
40. M. J. Mondry, D. I. Babic, J. E. Bowers, and L. A. Coldren, “Re-fractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications,” IEEE Photon. Technol. Lett., vol. 4, no. 6, pp. 627–630, 1992.
41. H. Yamada, T. Terakado, Y. Sasaki, S. Takano, T. Tamura, T. Torikai, and T. Uji, “Extremely low operating current 1.3-µm MQW lasers at high temperature,” in Proc. 18th European Conf. Opt. Commun., vol. 1, Berlin, Germany, 1992, paper Mo B3.3, pp. 101–104.
42. C. E. Zah, P. S. D. Lin, F. Favire, B. Pathak, R. Bhat, C. Caneau, A. S. Gozdz, N. C. Andreadakis, M. A. Koza, T. P. Lee, T. C. Wu, and K. Y. Lau, “1.5 µm compressive-strained multiquantum well 20-wavelength distributed-feedback laser arrays,” Electron. Lett., vol. 28, no. 9, pp. 824–825, 1992.
43. R. Olshansky, P. Hill, V. Lanzisera, and W. Powazink, “Frequency response of 1.3 µm InGaAsP high speed semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-23, no. 9, pp. 1410–1418, 1987.
44. L. F. Tiemeijer, P. J. A. Thijs, P. J. de Waad, J. J. M. Binsma, and T. V. Dongen, “Dependence of polarization, gain, linewidth enhancement factor and k-factor on the sign of the strain of InGaAs/InP strained-layer MQW lasers,” Appl. Phys. Lett., vol. 58, no. 24, pp. 2738–2740, 1991.
45. W. J. Fritz, L. B. Bauer, and C. S. Miller, “Analysis of aluminum gallium arsenide laser diodes failing due to nonradiative regions behind the facets,” in Proc. 27th Anna. Symp. Rel. Phys., Phoenix, AZ, 1989, pp. 59–64.