Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition

IEEE Photonics Technology Letters

Volumn 9, Issue 10, 1997, Pages 1319-1321

  Jones, A M ^b   Lent, B ^c   Kluender, J F ^b   Roh, S D ^b   Moore, A H ^d   Bonner, W A ^e   Coleman, J J ^a,b  

^a IEEE

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Johnson Matthey Electronics   (Canada)

^d EG and G Optoelectronics   (Canada)

^e Crystallod Inc   (United States)

Author keywords

Compensation; Crystal growth; Quantum well lasers; Semiconductor growth; Semiconductor lasers; Semiconductor materials; Strain

Indexed keywords

ATMOSPHERIC PRESSURE; CRYSTAL GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

PARTIAL STRAIN COMPENSATION;

QUANTUM WELL LASERS;

EID: 0031257944     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.623249     Document Type: Article

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