Feasibility of the electrical characterization of single SiO2 breakdown spots using C-AFM

Journal of Non-Crystalline Solids

Volumn 280, Issue 1-3, 2001, Pages 138-142

  Porti, M ^a   Rodriguez R ^a   Nafria M ^a   Aymerich, X ^a   Olbrich, A ^b   Ebersberger, B ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC POTENTIAL; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

SINGLE BREAKDOWN SPOTS;

SEMICONDUCTING FILMS;

EID: 0342419407     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(00)00366-5     Document Type: Article

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