A novel approach for modeling accumulation-mode SOI MOSFETs

Solid-State Electronics

Volumn 43, Issue 1, 1999, Pages 87-96

  Jang, Sheng Lyang ^a   Liu, Shau Shen ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342330431     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00190-7     Document Type: Article

References (16)

1. Niu G-F, Ruan G. Solid-State Electron 1995;38(10):1805-10.
2. Joachim H-O, Yamaguchi Y, Inoue Y, Nishimura T, Tsubouchi N. Jpn J Appl Phys 1994;33 (Part 1)(1B):558-62.
3. Colinge J-P. IEEE Trans Electron Devices 1990;37(3):718-23.
4. Flandre D, Terao A. Solid-State Electron 1992;35(8):1085-92.
5. Gentinne B, Flandre D, Colinge JP. Solid-State Electron 1996;39(7):1071-8.
6. Su K-W, Kuo JB. IEEE Trans Electron Devices 1997;44(5):832-9.
7. Haque-Ahmed S, Salama CAT. IEE Proc 1983;130(6):281-6.
8. Park H-J, Ko PK, Hu C. IEEE Trans Computer-Aided Design 1991;10(3):376.
9. Jang S-L, Hu M-C, Liu S-S, Chen Y-S. Jpn J Appl Phys 1997;361(3A):1015-24.
10. Hu M-C, Jang S-L, Chen Y-S, Liu S-S, Lin J-M. Jpn J. Appl Phys 1997:2606-13.
11. Jang S-L, Hu M-C, Chen Y-S. Solid-State Electron 1995;(6):1239-45.
12. Jang S-L, Tang T-H, Chen Y-S, Sheu C-J. Solid-State Electron 1996;(7):1043-9.
13. Chen Y-S, Tang T-H, Jang S-L. Solid-State Electron 1996;39(8):75-81.
14. Dunlop L. IEEE Solid-State Circuit 1990;25(2):616.
15. Sakurai T, Lin B, Newton AR. IEEE Trans Computer-Aided Design 1992;11:228.
16. Wang LK, Seliskar J, Bucelot T, Edenfeld A, Haddad N. IEDM Tech Dig 1991:679-82.