A simple, analytical and complete deep-submicrometer fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model considering velocity overshoot

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. A, 1997, Pages 1015-1024

  Jang, Sheng Lyang ^a   Hu, Man Chun ^a   Liu, Shau Shen ^a   Chen, Young Shying ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Deep submicrometer; Fully depleted SOI MOSFET; Simulation; Velocity overshoot

Indexed keywords

DRIFT DIFFUSION EQUATIONS; POISSON'S EQUATIONS; VELOCITY OVERSHOOT;

COMPUTER SIMULATION; DIGITAL CIRCUITS; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 0031096322     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1015     Document Type: Article

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