Modeling of hot-carrier stressed characteristics of submicrometer pMOSFETs

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 1043-1049

  Jang, Sheng Lyang ^a   Tang, Tz Hua ^a   Chen, Young Shying ^a   Sheu, Chorng Jye ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRONS; MATHEMATICAL MODELS; OXIDES; SURFACES;

GATE CURRENT CHARACTERISTICS; GATE OXIDE; HOT CARRIER STRESSED CHARACTERISTICS; TIME DEPENDENT DEGRADATION CHARACTERISTICS;

MOSFET DEVICES;

EID: 0030194271     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00414-9     Document Type: Review

References (14)

1. N. S. Saks, P. L. Heremans, L. V. DenHove, H. E. Maes, R. F. De Keersmaecker and G. J. Declerck, IEEE Trans. Electron Devices ED-33, 1529 (1986).
2. C. Hu, S. C. Tam. F.-C. Hsu, P.-K. Ko, T.-Y. Chan and K. W. Terrill, IEEE Trans. Electron Devices ED-32, 375 (1985).
3. S.-L. Jang et al., Solid-St. Electron. 38, 1239 (1995); Young-Shying Chen, Tz-Hua Tang and Sheng-Lyang Jang, Solid-St. Electron 1995, 39, 75 (1996).
4. S.-L. Jang et al., Solid-St. Electron. 38, 1239 (1995); Young-Shying Chen, Tz-Hua Tang and Sheng-Lyang Jang, Solid-St. Electron 1995, 39, 75 (1996).
5. T.-C. Ong, P.-K. Ko and C. Hu, IEEE Trans. Electron Devices 37, 1658 (1990).
6. M. Koyanagi, A. G. Lewis, R. A. Martin, T.-Y. Huang and J. Y. Chen, IEEE. Electron Devices Ed-34, 839 (1987).
7. R. Woltjer and G. M. Paulzen, IEEE. Electron Devices 41 1639 (1994).
8. M. Brox, A. Schwerin, Q. Wang and W. Weber, IEEE Trans. Electron Devices 41, 1184 (1994).
9. C. C. Li., K. N. Quader, E. R. Minami, C. Hu and P. K. Ko, IEDM Tech. Dig. 547 (1992).
10. J. H. Huang, IEDM Tech. Dig. 569 (1992).
11. Y. Pan, IEEE Trans. Electron Devices 41, 84 (1994).
12. Y. Pan and K. K. Ng, IEEE Trans. Electron Devices 41, 84 (1994).
13. P. M. Lee, T. Garfinkel, P. K. Ko and C. Hu, IEEE Trans. Electron Devices 41, 852 (1994).
14. Q. Wang, M. Brox, W. H. Krautschneider and W. Weber, IEEE Electron Device Lett. 218 (1991).