SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 1071-1078

Measurement and modeling of thin-film accumulation-mode SOI p-MOSFET intrinsic gate capacitances

(3) Gentinne, B a Flandre, D a Colinge, J P a

a UNIVERSITÉ CATHOLIQUE DE LOUVAIN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIGITAL INTEGRATED CIRCUITS; ELECTRIC CURRENT MEASUREMENT; LINEAR INTEGRATED CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTING BORON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

DRAIN TO SOURCE VOLTAGE; GATE TO DRAIN CAPACITANCE; GATE TO SOURCE VOLTAGE; INTRINSIC GATE TO SOURCE CAPACITANCE;

MOSFET DEVICES;

EID: 0030196776 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00408-4 Document Type: Review

Times cited : (4)

References (15)

1
- 0003783816
- Kluwer, Dordrecht
- J.-P. Colinge, Silicon-on-Insulator technology: Materials to VLSI. Kluwer, Dordrecht (1991).
- (1991) Silicon-on-Insulator Technology: Materials to VLSI
- Colinge, J.-P.¹

2
- 84954088841
- L. K. Wang, J. Seliskar, T. Bucelot, A. Edenfeld and N. Haddad, Tech. Dig. IEDM, 679 (1991).
- (1991) Tech. Dig. IEDM , pp. 679
- Wang, L.K.¹ Seliskar, J.² Bucelot, T.³ Edenfeld, A.⁴ Haddad, N.⁵

3
- 0042747101
- H.-O. Joachim, Y. Yamaguchi, Y. Inoue, T. Nishimura and N. Tsubouchi, in Ext. Abstracts of Int. Conf. on Solid State Devices and Materials, p. 473 (1993).
- (1993) Ext. Abstracts of Int. Conf. on Solid State Devices and Materials , pp. 473
- Joachim, H.-O.¹ Yamaguchi, Y.² Inoue, Y.³ Nishimura, T.⁴ Tsubouchi, N.⁵

4
- 30244484333
- R. Stephan, M. Raab, H. Kück and H. Vogt, in Proc. IEEE Int. SOI Conf., p. 109 (1994).
- (1994) Proc. IEEE Int. SOI Conf. , pp. 109
- Stephan, R.¹ Raab, M.² Kück, H.³ Vogt, H.⁴

5
- 0025404175
- J. P. Colinge, IEEE Trans. Electron Devices ED-37, 718 (1990).
- (1990) IEEE Trans. Electron Devices , vol.ED-37 , pp. 718
- Colinge, J.P.¹

6
- 0026908041
- D. Flandre and A. Terao, Solid-St. Electron. 35, 1085 (1992).
- (1992) Solid-St. Electron. , vol.35 , pp. 1085
- Flandre, D.¹ Terao, A.²

7
- 0028381275
- J.-P. Colinge, D. Flandre and F. Van de Wiele, Solid-St. Electron. 37, 289 (1994).
- (1994) Solid-St. Electron. , vol.37 , pp. 289
- Colinge, J.-P.¹ Flandre, D.² Van De Wiele, F.³

8
- 0028752522
- S. P. Sinha, A. Zaleski and D. E. Ioannou, IEEE Trans. Electron Devices ED-41, 2413 (1994).
- (1994) IEEE Trans. Electron Devices , vol.ED-41 , pp. 2413
- Sinha, S.P.¹ Zaleski, A.² Ioannou, D.E.³

9
- 30244569539
- B. Zhang, in Proc. IEEE Int. SOI Conf., p. 74 (1993).
- (1993) Proc. IEEE Int. SOI Conf. , pp. 74
- Zhang, B.¹

10
- 0025464376
- D. Flandre, F. Van De Wiele, P. Jespers and M. Haond, IEEE Electron Device Lett, EDL-11, 291 (1990).
- (1990) IEEE Electron Device Lett , vol.EDL-11 , pp. 291
- Flandre, D.¹ Van De Wiele, F.² Jespers, P.³ Haond, M.⁴

11
- 30244576793
- Ph.D. dissertation, U.C. Los Angeles
- R. D. Conilogue, Ph.D. dissertation, U.C. Los Angeles (1983).
- (1983)
- Conilogue, R.D.¹

12
- 0007948504
- J. R. Hauser and M. A. Littlejohn, Solid-St. Electron. 11, 667 (1968).
- (1968) Solid-St. Electron. , vol.11 , pp. 667
- Hauser, J.R.¹ Littlejohn, M.A.²

13
- 0027681914
- D. Flandre, IEEE Trans. Electron Devices ED-40, 1789 (1993).
- (1993) IEEE Trans. Electron Devices , vol.ED-40 , pp. 1789
- Flandre, D.¹

14
- 0003750001
- McGraw-Hill, New York
- Y. P. Tsividis, Operation and Modeling of the MOS Transistor. McGraw-Hill, New York (1987).
- (1987) Operation and Modeling of the MOS Transistor
- Tsividis, Y.P.¹

15
- 0039740033
- H. K. Lim and J. G. Fossum, IEEE Trans. Electron Devices ED-32, 446 (1985).
- (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 446
- Lim, H.K.¹ Fossum, J.G.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.