An analytical fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model considering the effects of self-heating, source/drain resistance, impact-ionization, and parasitic bipolar junction transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2606-2613

  Hu, Man Chun ^a   Jang, Sheng Lyang ^a   Chen, Young Shying ^a   Liu, Shau Shen ^a   Lin, Jien Min ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Fully depleted SOI; Impact ionization; Parasitic BJT; Parasitic resistance; Self heating

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR (BJT);

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; IONIZATION OF SOLIDS; OXIDES; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY OF SOLIDS;

MOSFET DEVICES;

EID: 0031140646     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2606     Document Type: Article

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