Analysis of photocurrents in low-temperature polysilicon thin-film transistors and the use of simulation to design LDD devices

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 86, Issue 11, 2003, Pages 29-36

  Nanno, Yutaka ^a   Senda, Kohji ^a   Mashimo, Shunji ^a   Kuramasu, Keizaburou ^a   Tsutsu, Hiroshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Depletion layer; Device simulation; LDD structure; Low temperature poly Si; Photocurrent

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRONIC DENSITY OF STATES; MATHEMATICAL MODELS; PHOTOCURRENTS; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

DEPLETION LAYER; SHEET RESISTANCE;

THIN FILM TRANSISTORS;

EID: 0242720850     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.10021     Document Type: Article

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