Photo-leakage current of poly-Si thin film transistors with offset and lightly doped drain structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5757-5761

  Kobayashi, Kazuhiro ^a,b   Niwano, Yasunori ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b LCD Engineering Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ETCHING; HYDROGENATION; LEAKAGE CURRENTS; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

LIGHTLY DOPED DRAIN STRUCTURES; PHOTO-LEAKAGE CURRENTS;

THIN FILM TRANSISTORS;

EID: 0033322922     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5757     Document Type: Article

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