Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Tsuchida, H ^a   Kamata, I ^a   Jikimoto, T ^a   Izumi, K ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; EPITAXIAL GROWTH; HEATING; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

STEP FLOW GROWTH; VERTICAL RADIANT HEATING REACTOR;

SILICON CARBIDE;

EID: 0034878658     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)