Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies

Journal of Applied Physics

Volumn 87, Issue 9 I, 2000, Pages 4293-4302

  Zerrai, A ^a   Marrakchi, G ^a   Bremond, G ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001674142     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373068     Document Type: Article

References (47)

1. R. B. Bylsma, P. M. Bridenbaugh, D. H. Olson, and A. M. Glass, Appl. Phys. Lett. 51, 889 (1987).
2. A. Partovi, J. Millerd, E. Gamire, M. Ziari, W. Steir, R. Trivedi, and M. B. Klein. Appl. Phys. Lett. 57, 846 (1990).
3. M. Ziari, W. H. Steier, P. M. Ranon, M. B. Klein, and S. Trivedi, J. Opt. Soc. Am.B 9, 1461 (1992).
4. Y. Blaud, P. Delaye, J. C. Launay, and G. Roosen, Opt. Commun. 105, 204 (1994).
5. J. Y. Moisan, N. Wolffer, O. Moine, P. Gravey, G. Martel, A. Aoudia, E. Repka, Y. Marfaing, and R. Triboulet, J. Opt. Soc. Am. B 11, 1655 (1994).
6. J. M. Baranowski, J. M. Langer, and S. Stefanova, Proceedings of the 11th International Conference on Physics of Semiconductors 2, Warszawa, 1972, p. 1001.
7. P. Peka, M. U. Lehr, H. J. Schulz, R. Schulz, R. Schwarz, and K. W. Benz, Appl. Phys. A: Solids Surf. 58, 447 (1994).
8. G. Bremond et al. Opt. Mater. 4, 246 (1995).
9. C. Eiche, W. Joerger, M. Fiederle, D. Ebling, R. Schwarz, and K. W. Benz, Opt. Mater. 4, 214 (1995).
10. P. Christmann, B. K. Meyer, J. Kreissl, R. Schwarz, and K. W. Benz, Phys. Rev. B 53, 3634 (1996).
11. J. C. Launay, T. Arnoux, and H. J. von Bardeleben, Semicond. Sci. Technol. 12, 47 (1997).
12. P. Peka, H. R. Selber, H. J. Schulz, R. Schwarz, and K. W. Benz, Solid State Commun. 98, 677 (1996).
13. G. Goetz, U. W. Pohl, H. J. Schultz, and M. Tiede, J. Lumin. 60-61, 16 (1994).
14. B. Lambert et al., Opt. Mater. 4, 267 (1995).
15. H. J. von Bardeleben, V. Mazoyer, X. Launay, and J. C. Launay, Semicond. Sci. Technol. 10, 163 (1995).
16. H. J. von Bardeleben, C. Miesner, J. Monge, B. Briat, J. C. Launay, and X. Launay, Semicond. Sci. Technol. 11, 58 (1996).
17. B. Briat, F. Ramaz, A. Hamri, H. J. von Bardeleben, J. C. Launay, and V. Mazoyer, Semicond. Sci. Technol. 10, 1629 (1995).
18. A. Aoudia, E. Rzepka, A. Lusson, A. Tromson-Carli, D. Schneider, Y. Marfaing, and R. Triboulet, Opt. Mater. 4, 241 (1995).
19. K. Guergouri, R. Triboulet, A. Tromson-Carli, and Y. Marfaing, J. Cryst. Growth 86, 61 (1988).
20. P. Blood and J, W. Orton, The Electrical Characterization of Semiconductors: Majority Curriers and Electron States (Academic, London, 1992), Chap. 9, p. 478.
21. G. Bremond, G. Guillot, and A. Nouailhat, Rev. Phys. Appl. 22, 873 (1987).
22. A. Zerrai et al., J. Cryst. Growth 161, 264 (1996).
23. J. Criado, A. I. Gomez, E. Calleja, and E. Munoz, Appl. Phys. Lett. 52, 660 (1988).
24. R. N. Schwartz, M. Ziari, and S. Trivedi, Phys. Rev. B 49, 5274 (1994).
25. P. A. Slodowy and J. M. Baranowski, Phys. Status Solidi B 49, 499 (1972).
26. E. Rzepka et al., J. Cryst. Growth 138, 244 (1994).
27. L. A. de Montmorillon et al., J. Opt. Soc. Am. B 13, 2341 (1996).
28. G. Martel et al., J. Cryst. Growth 161, 250 (1996).
29. V. I. Sokolov, Sov. Phys. Solid State 29, 1061 (1987).
30. J. M. Langer, C. Dellerue, M. Lannoo, and H. Heinrich, Phys. Rev. B 38, 7723 (1988).
31. C. Delerue, M. Lannoo, and G. Allan, Phys. Rev. B 39, 1669 (1989).
32. P. Delaye, F. Bignon, G. Roosen, M. Tapiero, J. P. Zielinger, Z. Guellil, J. C. Launay, and V. Mazoyer, Nonlinear Opt. 5, 103 (1993).
33. M. Fiederle, D. Ebling, C. Eiche, D. M. Hofmann, M. Salk, W. Stadler, K. W. Benz, and B. K. Meyer, J. Cryst. Growth 138, 529 (1994).
34. R. E. Kremer and W. B. Leigh, J. Cryst. Growth 86, 490 (1988).
35. G. Zoth and W. Schroter, Philos. Mag. B 58, 623 (1988).
36. T. Takebe, J. Saraie, and H. Matsunami, J. Appl. Phys. 53, 457 (1982).
37. M. Gauneau, R. Volle, G. Martel, and J. Y. Moisan, Opt. Mater. 7, 21 (1997).
38. P. Rudolph, H. Schroter, U. Rinas, H. Zimmermann, and R. Boyn, Adv. Mater. Opt. Electron. 3, 289 (1994).
39. P. Fougeres et al., J. Cryst. Growth 184/185, 1313 (1998).
40. A. Zerrai, G. Marrakchi, and G. Bremond, Final Report of European project "Optimisation of Photorefractive Optical Components for Information Technologies" OPROCIT No 22787 (1998).
41. A. Zerrai and G. Bremond, J. Appl. Phys. 84, 5554 (1998).
42. G. M. Martin, A. Mitonneau, D. Pons, A. Mircea, and D. W. Woodard, J. Phys. C 13, 3855 (1980).
43. B. K. Meyer, P. Omling, E. Weigel, and G. Muller-Vogt, Phys. Rev. B 46, 15135 (1992).
44. W. Stadler, D. M. Hofmann, A. T. Muschik, B. K. Meyer, E. Weigel, G. Muller-Vogt, M. Salk, E. Rupp, and K. W. Benz, Phys. Rev. B 51, 10619 (1995).
45. C. B. Davis, D. D. Allred, A. R. Mena, J. G. Hernandez, O. Gonzalez, B. C. Hess, and W. P. Allred, Phys. Rev. B 47, 13363 (1993).
46. M. Dammak, S. Alaya, A. Zerrai, G. Bremond, and R. Triboulet, Semicond. Sci. Technol. 13, 762 (1998).
47. E. Rzepka, A. Lusson, A. Riviere, A. Aoudia, Y. Marfaing, M. Cuniot, and R. Triboulet, J. Cryst. Growth 161, 286 (1996).