Optically transparent 6H-silicon carbide

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 53-56

  Bakin, A S ^a   Dorozhkin, S I ^a   Zubrilov, A S ^b   Kuznetsov, N I ^b   Tairov, Yu M ^a  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Crystal Quality; Materials Science; Optical Properties; Wide Band Gap Semiconductors

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; LIGHT ABSORPTION; LIGHT MEASUREMENT; LIGHT REFLECTION; OPTICAL MICROSCOPY; SILICON CARBIDE; SUBLIMATION; TRANSPARENCY; X RAY CRYSTALLOGRAPHY;

SUBLIMATION GROWTH; X RAY TOPOGRAPHY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031700476     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.53     Document Type: Article

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