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Volumn 21, Issue 5, 2003, Pages 2198-2204

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. IV. Effects of substrate temperature in a CF4 plasma

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEPOSITION; PLASMA DENSITY; PLASMAS; REACTIVE ION ETCHING; SUBSTRATES; SURFACE TREATMENT; THERMAL EFFECTS;

EID: 0242593744     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (7)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.