Post-implantation annealing effects on the surface morphology and electrical characteristics of 6H-SiC implanted with aluminum

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 831-834

  Ohi, A ^a,b   Ohshima, T ^a   Yoshikawa, M ^a   Lee, K K ^a   Iwami, M ^b   Itoh, H ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

Author keywords

Aluminum implantation; Hall effect; Surface roughness

Indexed keywords

ALUMINUM; ANNEALING; ATOMIC FORCE MICROSCOPY; HALL EFFECT; HOLE CONCENTRATION; SILICON CARBIDE; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; ELECTRIC PROPERTIES; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; MORPHOLOGY;

ALUMINUM IMPLANTATIONS; ALUMINUM IONS; ANNEALING PROCEDURES; ANNEALING TEMPERATURES; ELECTRICAL CHARACTERISTIC; HALL EFFECT MEASUREMENT; HIGH-TEMPERATURE ANNEALING; POSTIMPLANTATION ANNEALING; HIGH TEMPERATURE ANNEALING;

MORPHOLOGY; SILICON CARBIDE;

EID: 0036429055     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.831     Document Type: Conference Paper

References (2)

1. T. Troffer, M. Schadt, T. Frank, H. Itho, G Pensl, J. Heidi, H. P. Strunk, M. Maier, Phys. Stat. Sol. (a)162, 277(1997).
2. J. A. Cooper, S-H. Ryu, Y. Li, M. Matin, J. Spitz, D. T. Morisette, H. M. McGlothlin, M. K. Das, M. R. Melloch, M. A. Capano, and J. M. Woodall, Mat. Res. Soc. Symp. Proc. Vol. 572. 3(1999).