Epi-n-ZnO/〈100〉 Si, GaAs and InP by L-MBE: A novel approach for III-V devices

Materials Science in Semiconductor Processing

Volumn 6, Issue 4, 2003, Pages 219-224

  Ramamoorthy, K ^a   Sanjeeviraja, C ^a   Jayachandran, M ^b   Sankaranarayanan, K ^a   Misra, Pankaj ^c   Kukreja, L M ^c  

^a ALAGAPPA UNIVERSITY   (India)

^b CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^c RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

Buffer layer on InP; Laser epitaxy; Semiconducting materials; Solar cells; Thin film structure and morphology

Indexed keywords

FILM GROWTH; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON WAFERS; SOLAR CELLS; THIN FILMS;

BUFFER LAYERS;

MATERIALS SCIENCE;

EID: 0242526746     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.09.001     Document Type: Article

References (14)

1. Lowndes D.H., Geohegan D.B., Puretzky A.A., Norton D.P., Rouleau C.M. Science. 273(16):1996;898.
2. Baosheng Sang, Akira Yamada, Makoto Kongai Jpn J Appl Phys. 37:1998;L206-L208.
3. Freeman AJ, Poepplmeier KR, Mason TO, Chang RPH, Marks TJ. MRS Bull 2000; Vol XVII:45-51.
4. Chang S.J., Su Y.K., Shei Y.P. J Vac Sci Technol A. 13(2):1995;381-384.
5. Pompe T., Srikant V., Clarke D.R. MRS Symp Proc. 426:1996;461-466.
6. Coutts TJ, Young DL, Xianonan Li. MRS Bull 2000;58-65.
7. Gordan R.G. MRS Symp Proc. 426:1996;417-427.
8. Bohmer E., Siebke F., Rech B., Beneking C., Wagner H. MRS Symp Proc. 426:1996;519-524.
9. Craciun V., Elders J., Gardeniers J.G.E., Boyd L.W. Appl Phys Lett. 65(23):1994;2963-2965.
10. Craciun V., Elders J., Gardeniers J.G.E., Boyd L.W. Thin Solid Films. 259:1995;1-4.
11. Delahoy A.E., Cherny M. MRS Symp Proc. 426:1996;467-477.
12. Ramamoorthy K, Sanjeeviraja, C, Jayachandran M, Sankaranarayanan K, Bhattacharya P, Kukreja LM, Proceedings of International Conference on Crystal Growth - 13, and International Conference on Vapour Growth and Epitaxy - 11 (ICCG-13 and ICVG&E-11), in Association with International Summer School on Crystal Growth-11; ISSCG-11, 30 July-4 Aug, 2001, Doshisha University, Kyoto-610-0321, Japan. Abs.No: 03a-SB3-17, A0686.
13. Vasco E., Zaldo C., Vazquez L. J Phys Condens Matter. 13:2001;L663-L672.
14. Vasco E., Rubio-Zuazo J., Vazquez L., Prieto C., Zaldo C. J Vac Sci Technol B. 19(1):2001;224-229.