Optical properties of silicon rich silicon oxides obtained by PECVD

Microelectronics Journal

Volumn 35, Issue 1, 2004, Pages 65-67

  Diaz B ^a   Rodriguez J A ^a   Riera, M ^b   Llobera, A ^b   Dominguez C ^b   Tutor, J ^a  

^a UNIVERSITY OF HAVANA   (Cuba)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Optical properties; Plasma enhanced chemical vapor deposition; Refractive index

Indexed keywords

CHEMICAL BONDS; CONCENTRATION (PROCESS); HEAT TREATMENT; INFRARED SPECTROSCOPY; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; STOICHIOMETRY;

REACTANT GASES;

SILICON COMPOUNDS;

EID: 0242523042     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00224-6     Document Type: Conference Paper

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