Effects of process parameters on particle formation in SiH4/N2O PECVD and WF6 CVD processes

IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop

Volumn , Issue , 1998, Pages 221-225

  Wu, Z ^a   Nijhawan, S ^a   Campbell, S A ^a   Rao, N ^a   McMurry, P H ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFLUENTS; MASS SPECTROMETRY; NITROGEN OXIDES; PARTICLES (PARTICULATE MATTER); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SILANES; SILICA; SUBSTRATES; THERMAL EFFECTS; TUNGSTEN COMPOUNDS;

PARTICLE BEAM MASS SPECTROSCOPY; TUNGSTEN FLUORIDE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032255110     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)