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Volumn 146, Issue 6, 1999, Pages 2225-2228

Structural rearrangement of SiO2 films during their growth and annealing

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL BONDS; CRYSTAL ORIENTATION; FILM GROWTH; HELIUM; REFRACTIVE INDEX;

EID: 0032631330     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391918     Document Type: Article
Times cited : (2)

References (17)
  • 17
    • 0013259246 scopus 로고
    • J. P. Colinge, V. S. Lysenko, and A. N. Nazarov, Editors, Kluver Academic Publishers, Dordrecht, Netherlands
    • See, for instance, A. G. Revesz and H. L. Hughes, in Physical and Technological Problems of SOI Structures and Devices, J. P. Colinge, V. S. Lysenko, and A. N. Nazarov, Editors, p.133, Kluver Academic Publishers, Dordrecht, Netherlands (1995).
    • (1995) Physical and Technological Problems of SOI Structures and Devices , pp. 133
    • Revesz, A.G.1    Hughes, H.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.