Semiconductor Space Charge and Surface Oxide Thin Layers Capacitance by Electrochemical Impedance Spectroscopy

Electrochemistry

Volumn 71, Issue 10, 2003, Pages 844-852

  Chemla, Marius ^a   Bertagna, Valérie ^b   Rouelle, François ^a   Petitdidier, Sébastien ^c   Levy, Didier ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIVERSITÉ D'ORLÉANS   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Capacitance Voltage; Flatband Potential; Semiconductor Space Charge; Silicon; Silicon Oxide

Indexed keywords

CAPACITANCE; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; LEAKAGE CURRENTS; RADIATION EFFECTS; SILICA; SPECTROSCOPIC ANALYSIS; THERMAL INSULATION;

FLATBAND POTENTIAL; ULTRA-THIN LAYERS;

ELECTROCHEMISTRY;

EID: 0242406119     PISSN: 13443542     EISSN: None     Source Type: Journal    
DOI: 10.5796/electrochemistry.71.844     Document Type: Article

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