Electrochemical study for the characterisation of wet silicon oxide surfaces

Electrochimica Acta

Volumn 47, Issue 1, 2001, Pages 129-136

  Bertagna, V ^a   Erre, R ^a   Rouelle, F ^b   Chemla, M ^b   Petitdidier, S ^c   Levy, D ^c  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c STMICROELECTRONICS   (France)

Author keywords

CMOS; Impedance; Oxide; Silicon; Surface

Indexed keywords

CMOS INTEGRATED CIRCUITS; DISSOLUTION; ELLIPSOMETRY; OXIDATION; POLARIZATION; REACTION KINETICS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPY; SUBSTRATES; ULTRATHIN FILMS;

ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; LINEAR VOLTAMMETRY; WET ULTRATHIN SILICON OXIDES;

ELECTROCHEMISTRY;

EID: 0035450858     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(01)00569-2     Document Type: Article

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