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Electrochemical and Solid-State Letters

Volumn 6, Issue 1, 2003, Pages

R and C impedance components equivalent to the charge distribution within Si-substrate depletion layer

(6) Chemla, Marius a Bertagna, Valérie b Erre, René b Rouelle, François a Petitdidier, Sébastien c Levy, Didier c

a SORBONNE UNIVERSITÉ (France)

b UNIVERSITÉ D'ORLÉANS (France)

c STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; ELECTROCHEMISTRY; ELECTRODES; ELECTROLYTES; EQUIVALENT CIRCUITS; FERMI LEVEL; HYDROCHLORIC ACID; MATHEMATICAL MODELS; OXIDES; SEMICONDUCTING SILICON; SUBSTRATES;

CHARGE DISTRIBUTION; DEPLETION LAYER; SATURATED CALOMEL ELECTRODE; ZERO CURRENT IMPEDANCE;

INTERFACES (MATERIALS);

EID: 0037242337 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1524752 Document Type: Article

Times cited : (12)

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