Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (λ = 0.98 μm)

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 4, 2000, Pages 577-584

  Yang, G W ^a   Hwu, R Jennifer ^a   Xu, Z T ^b   Ma, X Y ^b  

^a Department of Electrical and Computer Engineering   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HIGH POWER LASERS; LASER MODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH;

BROAD AREA MULTIMODE LASER; HIGH BRIGHTNESS LASERS; LASER STRUCTURE; LOW THRESHOLD CURRENT DENSITY; SEMICONDUCTOR EPITAXIAL LAYERS; SINGLE MODE LASER;

QUANTUM WELL LASERS;

EID: 0034217323     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.883371     Document Type: Article

References (17)

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