A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 217-223

  Kuntman, Ayten ^a   Ardali, Arda ^a   Kuntman, Hakan ^b   Kaçar, Firat ^a  

^a ISTANBUL UNIVERSITY   (Turkey)

^b ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Hot carriers; Measurement and evaluation; Modeling and simulation of solid state devices and processes; MOS transistors; Weibull distribution

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; HOT CARRIERS; SOLID STATE DEVICES; THRESHOLD VOLTAGE; TRANSISTORS; VLSI CIRCUITS; WEIBULL DISTRIBUTION;

HOT CARRIER DEGRADATION;

MOS DEVICES;

EID: 0242335149     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.07.001     Document Type: Article

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