A simple approach for modeling the influence of hot-carrier effect on threshold voltage of MOS transistors

Proceedings of the International Conference on Microelectronics, ICM

Volumn 2001-January, Issue , 2001, Pages 43-46

  Kaçar, Frrat ^a   Kuntman, Ayten ^a   Kuntman, Hakan ^b  

^a ISTANBUL UNIVERSITY   (Turkey)

^b ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Characterization; Hot curriers; MOS models; MOS transistor

Indexed keywords

ANALOG INTEGRATED CIRCUITS; CHARACTERIZATION; FIELD EFFECT TRANSISTORS; HOT CARRIERS; MICROELECTRONICS; MOSFET DEVICES;

BUILDING BLOCKES; HOT CARRIER EFFECT; HOT CURRIERS; HOT-CARRIER-INDUCED DEGRADATION; MOSFET PARAMETERS; OPERATION RELIABILITY; RELIABILITY CONCEPTS; SIMPLE EXPRESSION;

THRESHOLD VOLTAGE;

EID: 33845621489     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM.2001.997482     Document Type: Conference Paper

References (13)

1. Y. Pan. "A physical-based analytical model fur the hot currier induced saturation current degradation of p-MOSFETs". IEEE Trans. Electron Devices. Vol. 41, No. 1. 1994. pp:84-89
2. R. Thewes. W. Weber. "Effects of hot Carrier degradation in analog CMOS circuits". Micro Elec. Eng.. Vol. 36. 1997. pp:285-292
3. R. Thewes. M. Brox. K. F. Goser. W. Weber. "Hot carrier degradation of p-MOSFET's under analog operation". IEEE Trans. Electron Devices. 1997. pp. 607-617.
4. S. L. Jang. T. H. Tang. Y. S. Chen. C. J. Shea. "Modelling of hot carrier stressed characteristic of subniicrometer p-MOSFETs". Solid State Elec. 1996. pp. 1043-1047.
5. P. Heramans. R. Bellens. G. Groeseneken. H. E. Mens. "Consistent model for the hot carrier degradation in itchannel and p-chunncl MOSFETs". IEEE Trans. Electron Devices. 1998. pp. 2194-2209.
6. M. Brox. A. V. Schwerin. O. Wang. W. Weber, "A model for time and bias dependence of p-MOSFFT degradation". IEEE Trans. Electron Devices. 1994. pp.. 1184-1196
7. V. H. Chan. J. E. Chung. The impact of NMOSFET hotcarrier degradation on CMOS analog subcircuit performance. IEEE Journal of Solid-State Circuits. Vol. 30. No. 6. June 1995.
8. Y. Gu, J. S. Yuan. Gate-oxide thickness effects on hotcarrier-induced degradation in n-MOSFETs. International Journal of Electronics. 1998. Vol. 85. No. 1. pp. 1-9
9. A. Kuntman. A study on transition of linear polymer dimension from theta to collapsed-regime by intrinsic viscosity for polylethyl methucrylate) in isopropyl alcohol. Polymer. 1995. 36. No. 3 599-602.
10. P. Antognetti. G. Massobrio. Semiconductor Device Modeling with SPICE. McGraw-Hill. 1988.
11. D. P. Foty. MOSFET modeling with SPICE: Principles and Practice. Prentice Hall New Jersey. 1997.
12. A. Zeki and H. Kuntnutn: New MOSFET model suitable for analogue IC analysis. International Journal of Electronics. 1995. Vol. 78. No. 2. pp. 247-260.
13. H. Kuntman. A. Dolur. Implementation of a Novel MOSFET Model into SPICE Program to Obtain Extended Accuracy for Simulation of Analogue Circuits. Proc. of the 7th International Conference on Optimization of Electrical and Electronic Equipment: OPTIM 2000. May 11-12. 2000. Brusov. Romania, pp. 765-770.