Effects of a thin AlAs layer on lnAs quantum dot electronic structure

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4515-4519

  Movilla, J L ^a   Climente, J I ^a   Planelles, J ^a  

^a Box 224   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRONIC STRUCTURE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

POTENTIAL BARRIERS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0142120858     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1606519     Document Type: Article

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