Characteristics of W and Cu/W gate MOS diodes fabricated by a process utilizing LPCVD of W and Cu lift-off

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 501-505

  Kouvatsos, D N ^a   Ioannou Sougleridis, V ^a   Tsevas, S ^a   Christoforou, F ^a   Davazoglou, D ^a   Boukouras, C ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Copper metallization; Diffusion barriers; MOS structures; Tungsten gates

Indexed keywords

DIFFUSION BARRIERS;

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EVAPORATION; TUNGSTEN;

MOS DEVICES;

EID: 0142043389     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00373-3     Document Type: Conference Paper

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