Dynamics of photoluminescence in GaInNAs saturable absorber mirrors

Applied Physics A: Materials Science and Processing

Volumn 77, Issue 7, 2003, Pages 861-863

  Harkonen A ^a   Jouhti, T ^a   Tkachenko, N V ^a   Lemmetyinen, H ^a   Ryvkin, B ^a   Okhotnikov, O G ^a   Sajavaara, T ^b   Keinonen, J ^b  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; HIGH ENERGY ELECTRON DIFFRACTION; ION IMPLANTATION; MIRRORS; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

BRAGG STACKS; GALLIUM INDIUM NITRIDE ARSENIDE; SEMICONDUCTOR SATURABLE ABSORBER MIRRORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0142023000     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2240-3     Document Type: Article

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