Broadband semiconductor saturable absorber mirror at 1.55μm using Burstein-Moss shifted Ga0.47In0.53As/InP distributed Bragg reflector

Electronics Letters

Volumn 37, Issue 6, 2001, Pages 374-375

  Xiang, N ^a   Okhotnikov, O ^a   Vainionpaa A ^a   Guina, M ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; FIBER LASERS; LASER MODE LOCKING; LASER PULSES; SEMICONDUCTING GALLIUM COMPOUNDS;

DISTRIBUTED BRAGG REFLECTOR; PASSIVE MODELOCKING; SEMICONDUCTOR SATURABLE ABSORBER MIRRORS;

MIRRORS;

EID: 0035868107     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010275     Document Type: Article

References (8)

1. Eye-safe pulsed microchip laser using semiconductor saturable absorber mirrors
2. Room temperature pulsed operation of 1.5μm GaInAsP/InP vertical-cavity surface-emitting laser
3. Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP
4. 0.48/GaInAs(P) distributed Bragg mirror on InP substrate for 1.3-1.55μm wavelengths
5. High reflectivity 1.55μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates
6. High reflectivity 1.55μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy
7. Precise control of 1.55μm vertical-cavity surface-emitting laser structure with InAlGaAs/InAlAs Bragg reflectors by in situ growth monitoring
8. Study of light absorption in n-type and p-type GaInAs and the possibility of making 1.55-μm GaInAs/InP Bragg mirrors