Monolithic tunable InP-based vertical cavity surface emitting laser

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4755, Issue , 2002, Pages 448-454

  Leclercq, Jean Louis ^a   Regreny, P ^a   Viktorovitch, P ^a   Bakouboula, A ^b   Benyattou, Taha ^b   Sagnes, Isabelle ^c   Saint Girons, G ^c   Meriadec C ^c   Mereuta, A ^c   Bouchoule, S ^c   Plais, A ^d   Jacquet, Joel ^d  

^a ECOLE CENTRALE DE LYON   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c UNIV PARIS SUD   (France)

^d OPTO+   (France)

Author keywords

InP; Micromachined; MOEMS; Optoelectronic; Tunable; VCSEL

Indexed keywords

DOPING (ADDITIVES); ION IMPLANTATION; LASER TUNING; METALLORGANIC VAPOR PHASE EPITAXY; MICROMACHINING; OPTICAL PUMPING; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; SOLID STATE LASERS; TUNNEL JUNCTIONS; WAVELENGTH DIVISION MULTIPLEXING;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

MICROELECTROMECHANICAL DEVICES;

EID: 0142005710     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.462843     Document Type: Article

References (5)

1. Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL
2. A new MOCVD InP/AlGaInAs distributed bragg reflector for 1.55μm VCSELs
3. Fabrication of InP-based freestanding microstructures by selective surface micromachining
4. Implantation optimisation for 1.55 μm VCSEL