Implantation optimization for 1.55 μm VCSEL

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 87-90

  Boucart, J ^a   Derouin, E ^a   Bouche, N ^a   Starck, C ^a   Plais, A ^a   Gaborit, F ^a   Goldstein, L ^a   Escalere, C ^a   Jacquet, J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ION IMPLANTATION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032691943     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)