VGF crystal growth and vapor-phase Fe doping technologies for semi-insulating 100 mm diameter InP substrates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 249-254

  Asahi, T ^a   Uchida, M ^a   Kainosho, K ^a   Oda, O ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FREEZING; IRON; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON WAFERS; SUBSTRATES; VAPOR PHASE EPITAXY;

LIQUID ENCAPSULATED CZOCHRALSKI (LEC) METHOD; VERTICAL GRADIENT FREEZING (VGF);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032645965     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)