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Defect and Diffusion Forum

Volumn 157-159, Issue , 1998, Pages 103-112

Annealing-related phenomena in bulk semi-insulating indium phosphide

(2) Jimenez J a Fornari, R b

a UNIVERSITY OF VALLADOLID (Spain)

b CNR (Italy)

Author keywords

Electrical compensation; Homogeneity; Ingot annealing; Iron doping; Native donors; Wafer annealing

Indexed keywords

DIFFUSION; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INGOTS; IRON; IRON COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON WAFERS; SUBSTRATES;

ANNEALED MATERIALS; ELECTRICAL COMPENSATION; FE-DOPED; HOMOGENEITY; INGOT ANNEALING; INP SUBSTRATES; IRON DOPING; NATIVE DONOR; SEMI-INSULATING; WAFER ANNEALING;

ANNEALING;

EID: 85088076259 PISSN: 10120386 EISSN: 16629507 Source Type: Journal
DOI: 10.4028/www.scientific.net/ddf.157-159.103 Document Type: Article

Times cited : (2)

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