High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 1 I, 2002, Pages 62-67

  Fay, P ^a,b   Caneau, C ^c   Adesida, I ^a,d  

^a IEEE   (United States)

^b University of Notre Dame   (United States)

^c Corning Inc ^*  (United States)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

MSM photodetectors; Optoelectronic integrated circuits; P i n photodiodes; Photoreceivers

Indexed keywords

MONOLITHIC PHOTORECEIVERS;

BANDWIDTH; INTERSYMBOL INTERFERENCE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTOR METAL BOUNDARIES; SPURIOUS SIGNAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036211669     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.981247     Document Type: Article

References (8)

1. 20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications
2. 46.5 GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed preamplifier
3. Monolithic In-GaAs-InP p-i-n/HBT 40-Gb/s optical receiver module
4. Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier
5. InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
6. Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
7. Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems
8. High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers