High-speed heterostructure photodetectors characterisation

ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems

Volumn 1998-October, Issue , 1998, Pages 99-102

  TomBSka, M ^a   Uherek, F ^a   Jakabovic, J ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; FREQUENCY DOMAIN ANALYSIS; HETEROJUNCTIONS; MICROSYSTEMS; PHOTONS; REFLECTION;

FREQUENCY DOMAINS; HETEROSTRUCTURE PHOTODETECTORS; HIGH SPEED; HIGH SPEED PHOTODETECTORS; MICROWAVE REFLECTION; TRANSMISSION COEFFICIENTS; TRANSMISSION MEASUREMENTS;

PHOTODETECTORS;

EID: 0141997463     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.1998.730176     Document Type: Conference Paper

References (2)

1. M. TomBSka, M. Marso, A. Fox, P. KordoS: Influence of the 2-DEG on the MSM Photodetector Properties, Proceedings of the 7th European Workshop on Heterostructure Technology, HETECH'97, Jiilich, Germany, 1997.
2. J. KovZ et al.: InAIGaAs-InGaAs-InP RCE PIN Photodiode for 1300 nni Wavelength Region, Indium Phospide and Related Materials Conference Proccedings, Schwabisch Gmund, Germany, 1996, p.219-222.