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Volumn 2, Issue 4, 2002, Pages 247-253

Preparation of porous n-type silicon sample plates for desorption/ionization on silicon mass spectrometry (DIOS-MS)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

EID: 0141886247     PISSN: 14730197     EISSN: None     Source Type: Journal    
DOI: 10.1039/b207634a     Document Type: Article
Times cited : (40)

References (20)
  • 1
    • 0001879044 scopus 로고    scopus 로고
    • ed. L. Canham. Institute of Electrical Engineers, London
    • L. Canham, in Properties of Porous Silicon, ed. L. Canham. Institute of Electrical Engineers, London, 1997, pp. 249-255.
    • (1997) Properties of Porous Silicon , pp. 249-255
    • Canham, L.1
  • 5
    • 0345188660 scopus 로고    scopus 로고
    • J. Wei, J. M. Buriak and G. Siuzdak, Nature, 1999, 399, 243-246. In this paper the desorption/ionization on silicon (DIOS) technique was introduced.
    • (1999) Nature , vol.399 , pp. 243-246
    • Wei, J.1    Buriak, J.M.2    Siuzdak, G.3
  • 6
    • 0035253646 scopus 로고    scopus 로고
    • Z. Shen, J. J. Thomas, C. Averbuj, K. M. Broo, M. Engerlhard, J. E. Crowell, M. G. Finn and G. Siuzdak, Anal. Chem., 2001, 73, 612-619. The study of further optimization of porous silicon structure and physicochemical properties for DIOS. The parameters of pSi generation were studied, such as silicon crystal orientation. resistivity, etching solution, etching current density, etching time and irradiation.
    • (2001) Anal. Chem. , vol.73 , pp. 612-619
    • Shen, Z.1    Thomas, J.J.2    Averbuj, C.3    Broo, K.M.4    Engerlhard, M.5    Crowell, J.E.6    Finn, M.G.7    Siuzdak, G.8
  • 9
    • 0035416468 scopus 로고    scopus 로고
    • R. A. Kruse, X. Li, P. W. Bohn and J. V. Sweedler, Anal. Chem., 2001, 73, 3639-3645. The effects of morphology and physical properties of porous silicon on DIOS-MS performance were studied. The role of photoluminescence of pSi on DIOS was examined.
    • (2001) Anal. Chem. , vol.73 , pp. 3639-3645
    • Kruse, R.A.1    Li, X.2    Bohn, P.W.3    Sweedler, J.V.4
  • 11
    • 0035933989 scopus 로고    scopus 로고
    • S. Alimpiev, S. Nikiforov, V. Karavanskii, T. Minton and J. Sunner, J. Chem. Phys., 2001, 115(4), 1891-1901. The study of the mechanisms of laser-induced desorption ionization. Both silicon and carbon surfaces and UV- and IR-laser-induced desorption ionization of organic compounds were compared.
    • (2001) J. Chem. Phys. , vol.115 , Issue.4 , pp. 1891-1901
    • Alimpiev, S.1    Nikiforov, S.2    Karavanskii, V.3    Minton, T.4    Sunner, J.5
  • 18
    • 0345199611 scopus 로고    scopus 로고
    • Native oxide films and chemical oxide films
    • ed. T. Hattori, Springer, Berlin
    • M. Morita, Native oxide films and chemical oxide films, in Ultraclean Surface Processing of Silicon Wafers, ed. T. Hattori, Springer, Berlin, 1998.
    • (1998) Ultraclean Surface Processing of Silicon Wafers
    • Morita, M.1
  • 20
    • 0036829717 scopus 로고    scopus 로고
    • Atmospheric Pressure Photoionization Mass Spectrometry (APPI-MS) - Ionization mechanism and the effect of solvent on the ionization of naphthalenes
    • in press
    • T.J. Kauppila, T. Kuuranne, E.C. Meurer, M.N. Eberlin, T. Kotiaho and R. Kostiainen, Atmospheric Pressure Photoionization Mass Spectrometry (APPI-MS) - Ionization Mechanism and the Effect of Solvent on the Ionization of Naphthalenes, Anal. Chem., in press.
    • Anal. Chem.
    • Kauppila, T.J.1    Kuuranne, T.2    Meurer, E.C.3    Eberlin, M.N.4    Kotiaho, T.5    Kostiainen, R.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.