Optimal design of GaN-AlGaN Bragg-confined structures for intersubband absorption in the near-infrared spectral range

IEEE Journal of Quantum Electronics

Volumn 39, Issue 10, 2003, Pages 1297-1304

  Radovanović, Jelena ^a   Milanović, Vitomir ^b   Ikonić, Zoran ^c   Indjin, Dragan ^c   Jovanović, Vladimir ^c   Harrison, Paul ^c  

^a UNIVERSITY OF BELGRADE   (Serbia)

^b Institut of Electrical Engineering   (Serbia)

^c UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Bragg confined structures; GaN quantum wells; Intersubband absorption

Indexed keywords

ALGORITHMS; ELECTRON TRANSITIONS; GALLIUM NITRIDE; GROUND STATE; INFRARED RADIATION; OPTIMIZATION; PARTIAL DIFFERENTIAL EQUATIONS; POISSON EQUATION; POLARIZATION; PRODUCT DESIGN; SEMICONDUCTING ALUMINUM COMPOUNDS; SIMULATED ANNEALING;

BRAGG CONFINED STRUCTURES; INTERSUBBAND ABSORPTION; NEAR INFRARED SPECTRAL RANGE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0141883986     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.817584     Document Type: Article

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