Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 369-373

  Kalaev, V V ^a   Lukanin, D P ^a   Zabelin, V A ^a   Makarov, Yu N ^b   Virbulis, J ^c   Dornberger, E ^c   Von Ammon, W ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b STR GmbH   (Germany)

^c SILTRONIC AG   (Germany)

Author keywords

A1. Turbulent convection; A2. Czochralski method; B1. Silicon

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLIZATION; HEAT CONVECTION; SEMICONDUCTING SILICON; TURBULENCE;

TURBULENT CONVECTION;

CRYSTAL GROWTH FROM MELT;

EID: 0036968624     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00132-4     Document Type: Conference Paper

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