Compatibility of chemically amplified photoresists with bottom antireflective coatings

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 655-665

  Yoshino, Hiroshi ^a   Itani, Toshiro ^a   Hashimoto, Shuichi ^a   Yamana, Mitsuharu ^a   Yoshii, Tsuyoshi ^a   Tanabe, Hiroyoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Acid structures; Anti reflective coatings; Blocking groups; Chemically amplified resists

Indexed keywords

ACIDS; ANTIREFLECTION COATINGS; CEMENTS; GROUP TECHNOLOGY; ORGANIC COMPOUNDS; PHOTORESISTORS; PHOTORESISTS;

[CARBONYL; ACID DIFFUSION LENGTHS; ANTI-REFLECTIVE COATINGS; BLOCKING GROUPS; BOTTOM ANTI-REFLECTIVE COATINGS; CHEMICALLY AMPLIFIED PHOTORESISTS; CHEMICALLY AMPLIFIED RESISTS; DEBLOCKING REACTIONS; DIFFUSION LENGTHS; EFFECTS OF ACIDS; GOOD COMPATIBILITIES; LOWER ACIDS; PHOTO ACID GENERATORS; POLYHYDROXYSTYRENE; POST EXPOSURES; RESIST FILMS; RESIST MATERIALS; RESOLUTION CAPABILITIES; REVERSE ORDERS; TRIFLUOROMETHANE SULFONIC ACIDS; WEAK ACIDS;

REFLECTIVE COATINGS;

EID: 0141844324     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312459     Document Type: Conference Paper

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