Defects printability and specification of ArF mask in repeating feature

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1357-1365

  Kim, Wan Ho ^a   Ma, Won Kwang ^a   Kim, Hee Bom ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

ArF attenuated PSM; Defect Printability; Mask Specification; MEF

Indexed keywords

ARGON; DEFECTS; ELECTROMAGNETIC WAVE ATTENUATION; MASKS; PRINTING;

MASK SPECIFICATIONS;

LITHOGRAPHY;

ARGON; ATTENUATION; DEFECTS; LITHOGRAPHY; PRINTING;

EID: 0036411474     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474518     Document Type: Article

References (4)

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4. B. Su, Guy Eytan, and A. Romano "193nm photo-resist shrinkage after Electron Beam Exposure," Proc. SPIE Vol. 4344, pp. 695-706, 2001.