Reductive ion insertion into thin-film indium tin oxide (ITO) in aqueous acidic solutions: the effect of leaching of indium from the ITO

Journal of Materials Science: Materials in Electronics

Volumn 10, Issue 2, 1999, Pages 101-107

  Monk, P M S ^a   Man, Che M ^a  

^a MANCHESTER METROPOLITAN UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; CYCLIC VOLTAMMETRY; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ETCHING; LEACHING; REACTION KINETICS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY;

INDIUM TIN OXIDE; PROTON INSERTION;

THIN FILMS;

EID: 0033115953     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008955929904     Document Type: Article

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